Datasheet4U Logo Datasheet4U.com

SGA5286Z - CASCADABLE SiGe HBT MMIC AMPLIFIER

Description

The SGA5286Z is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Features

  • High Gain: 12.0dB at 1950 MHz.
  • Cascadable 50Ω.
  • Operates from Single Supply.
  • Low Thermal Resistance Package.

📥 Download Datasheet

Datasheet Details

Part number SGA5286Z
Manufacturer RFMD
File Size 241.83 KB
Description CASCADABLE SiGe HBT MMIC AMPLIFIER
Datasheet download datasheet SGA5286Z Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SGA ARINC 600 Rack and Panel Connectors ITT Industries
SGA-0163 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0163Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices

Other Datasheets by RFMD

Part Number Description
SGA5289Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5386Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5486Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5489Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5586Z CASCADABLE SiGe HBT MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGA5286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier SGA5286Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA5286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Published: |