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RTH23007-10 - GaN Doherty Hybrid Amplifier

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.

Features

  • GaN on SiC Chip on Board.
  • Surface Mount Hybrid Type.
  • Asymmetric Doherty Amplifier.
  • High Efficiency.
  • No Matching circuit needed.

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Datasheet Details

Part number RTH23007-10
Manufacturer RFHIC
File Size 285.60 KB
Description GaN Doherty Hybrid Amplifier
Datasheet download datasheet RTH23007-10 Datasheet

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Full PDF Text Transcription

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GaN Doherty Hybrid Amplifier RTH23007-10 Product Features • GaN on SiC Chip on Board • Surface Mount Hybrid Type • Asymmetric Doherty Amplifier • High Efficiency • No Matching circuit needed Applications • RF Sub-Systems • Base Station • RRH • 4G/ LTE system • Small cell Package Type : NP-8CL Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.
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