RT240PD - Preliminary 10W Power Transistor

Description

RT240PD Application Repeater RF Sub-Systems Base Station Converter IMT-2000 ISM MMDS Wi-Fi, Wi-max The RT240PD is designed for base stations and cell extenders as cellular and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-

Features

High Output Power P1dB = 40dBm(Typ. )@2.14GHz.
High Efficiency.
High Power Gain G1dB = 17dB(Typ. )@900MHz G1dB = 13dB(Typ. )@2.14GHz.
High Linearity.
Hermetically sealed package.
GaN HFET.

RFHIC

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Datasheet Details

Part number	RT240PD
Manufacturer	RFHIC
File Size	692.74 KB
Description	Preliminary 10W Power Transistor
Datasheet	RT240PD Datasheet
Additional preview pages of the RT240PD datasheet.

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www.DataSheet4U.com Preliminary 10W Power Transistor Product Features • High Output Power P1dB = 40dBm(Typ.)@2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package • GaN HFET Description RT240PD Application • Repeater • RF Sub-Systems • Base Station • Converter • IMT-2000 • ISM • MMDS • Wi-Fi, Wi-max The RT240PD is designed for base stations and cell extenders as cellular and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems, GaN HFET is used and attached on a gold sub carrier. z Typical Specifications Parameter Frequency (MHz) Small Signal Gain (dB) VSWR (Input / Output) 1dB Compression Point (dBm) * * Specifications 900 17 1800 14 2140 13 2.

Published: Jan 11, 2008 |