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LCL0912-L - (LCLxx12-L) MCM LNA

Download the LCL0912-L datasheet PDF. This datasheet also covers the LCL1512-L variant, as both devices belong to the same (lclxx12-l) mcm lna family and are provided as variant models within a single manufacturer datasheet.

Description

RFHIC’s LOW Noise Amplifier series are all hybrid LNA type products which includes all matching for the convenience of customers.

LCL series are focused on higher OIP3 while maintaining low noise.

The structure of the device is built with GaAs pHEMT die attached on a ceramic thick film substrate.

Features

  • LCL0912-L / LCL1512-L LCL1812-L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LCL1512-L_RFHIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LCL0912-L
Manufacturer RFHIC
File Size 201.92 KB
Description (LCLxx12-L) MCM LNA
Datasheet download datasheet LCL0912-L Datasheet

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Other Datasheets by RFHIC

Part Number Description
LCL0902-L (LCLxx02-L) MCM LNA
LCL0402-L (LCLxx02-L) MCM LNA
LCL1202-L (LCLxx02-L) MCM LNA
LCL1503-L (LCL1x03-L) MCM LNA
LCL1512-L (LCLxx12-L) MCM LNA

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCM LNA Product Features LCL0912-L / LCL1512-L LCL1812-L Applications • 2G & 3G Repeater • Base Station • PCS, CDMA, W-CDMA • GSM, DCS, UMTS • WiMAX, Wibro, WLAN • RF Sub-Systems Package : CP-16B • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage (+5V) • Surface Mount Hybrid Type • Tape & Reel Packaging • Small Size, High Heatsink • Alumina Substrate • Pb Free / RoHS Standard Descriptions RFHIC’s LOW Noise Amplifier series are all hybrid LNA type products which includes all matching for the convenience of customers. LCL series are focused on higher OIP3 while maintaining low noise. The structure of the device is built with GaAs pHEMT die attached on a ceramic thick film substrate.
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