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SGA9189Z - Medium Power Discrete SiGe Transistor

Description

RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz.

With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm.

This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process.

Features

  • 50MHz to 3000MHz Operation.
  • 39dBm Output IP3 Typ. at 1.96GHz.
  • 12.2dB Gain Typ. at 1.96GHz.
  • 25.5dBm P1dB Typ. at 1.96GHz.
  • 2.1dB NF Typ. at 0.9GHz.
  • Cost-Effective.
  • 3V to 5V Operation.

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Datasheet Details

Part number SGA9189Z
Manufacturer RF Micro Devices
File Size 195.82 KB
Description Medium Power Discrete SiGe Transistor
Datasheet download datasheet SGA9189Z Datasheet

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SGA9189Z Medium Power Discrete SiGe Transistor SGA9189Z Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
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