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SDA-1000 - GaAs Distributed Amplifier

Description

RFMD’s SDA-1000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications.

Features

  • Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 3 VG2 2 IN 1 4 OUT 5 7 6 9 Parameter ID EN TI AL :N DA Min. DC 4 Specification Typ. VTI Max. 20 8 Unit Electrical Specifications Operating Frequency Gain Output Voltage IP3 at 10GHz P1dB at 10GHz PSAT at 10GHz 14 36 GHz dB VP-P dBm 25 26.5 dBm dBm dB dB CO NF Noise Figure at Mid-Band 4 Input Return Loss 10 15 Output Return.

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Datasheet preview – SDA-1000

Datasheet Details

Part number SDA-1000
Manufacturer RF Micro Devices
File Size 197.96 KB
Description GaAs Distributed Amplifier
Datasheet download datasheet SDA-1000 Datasheet
Additional preview pages of the SDA-1000 datasheet.

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Full PDF Text Transcription

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SDA-1000 GaAs Distributed Amplifier www.DataSheet4U.com Preliminary SDA-1000 GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description RFMD’s SDA-1000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, broadband test equipment (ATE), military, and aerospace applications. Features Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 3 VG2 2 IN 1 4 OUT 5 7 6 9 Parameter ID EN TI AL :N DA Min. DC 4 Specification Typ. VTI Max.
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