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RF3855 - 3.1V LINEAR POWER AMPLIFIER

Description

The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications.

The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band.

Features

  • Single 3.1V Supply.

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Datasheet Details

Part number RF3855
Manufacturer RF Micro Devices
File Size 169.94 KB
Description 3.1V LINEAR POWER AMPLIFIER
Datasheet download datasheet RF3855 Datasheet

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Full PDF Text Transcription

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RF38553.1 V Linear Power Amplifier RF3855 3.1V LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 4 x 4 GND RF IN NC NC NC Features  Single 3.1V Supply Applications  L-BAND SATCOM Applications 1 16 15 14 13 VPD1 2 12 VCC1 MODE 3 11 VCC1 VPD2 4 10 VCC 56789 GND NC RF OUT RF OUT GND Functional Block Diagram Product Description The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground. Ordering Information RF3855 3.
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