Datasheet4U Logo Datasheet4U.com

RF3826 - 9W GaN WIDEBAND

Description

The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm.
  • Gain 12dB.
  • Power Added Efficiency 45% (30MHz to 2500MHz).
  • Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature.
  • RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
  • GND BASE Functional Block Diagram Product Descript.

📥 Download Datasheet

Datasheet Details

Part number RF3826
Manufacturer RF Micro Devices
File Size 1.30 MB
Description 9W GaN WIDEBAND
Datasheet download datasheet RF3826 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF3808S Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) International Rectifier
RF300 DPDT Non-Latching Electromechanical Relay Teledyne
RF3000 C-Band LNA Paradise Datacom
RF3000 Spread Spectrum Baseband Modem Micro Devices
RF3002A SCHWIMMERSCHALTER HORIZ ETC

Other Datasheets by RF Micro Devices

Part Number Description
RF3827 LINEAR GENERAL PURPOSE AMPLIFIER
RF3800 GaAs HBT PRE-DRIVER AMPLIFIER
RF3800PCBA-416 GaAs HBT PRE-DRIVER AMPLIFIER
RF3802 GaAs HBT PRE-DRIVER AMPLIFIER
RF3802PCBA-410 GaAs HBT PRE-DRIVER AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier RF3826 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm  Gain 12dB  Power Added Efficiency 45% (30MHz to 2500MHz)  Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature  RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
Published: |