RF3315
Description
The RF3315 is a high-efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply.
1.04 0.80 0.50 0.30 1.60 1.40
3.10 2.90 0.48 0.36
2 PL
4.60 4.40
2.60 2.40 Shaded lead is pin 1.
Dimensions in mm.
1.80 1.45 1.75 1.40
0.43 0.38
0.53 0.41
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS In Ga P/HBT
Package Style: SOT89
Ga As HBT Si Ge HBT Ga N HEMT
Ga As MESFET Si CMOS Si Ge Bi-CMOS
Features
- 300MHz to 3GHz
- +40d Bm Output IP3
- 12.5d B Gain at 2.0GHz
- +23d Bm P1d B
- 3.0d B Typical Noise Figure at 2.0GHz
- Single 5V Power Supply
1 RF IN
2 GND
3 RF OUT
Ordering Information
RF3315 Broadband High Linearity Amplifier RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz) RF3315PCBA-411 Fully Assembled Evaluation Board...
