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RF3160 - DUAL-BAND GSM/DCS POWER AMP MODULE

General Description

The RF3160 is a high-power, high-efficiency power amplifier module.

The device is self-contained with 50 Ω input and output terminals.

Key Features

  • Single 2.8V to 5.0V Supply Voltage.
  • +35.0dBm GSM Output Power at 3.2V.
  • +32.5dBm DCS Output Power at 3.2V 13 GND 12 DCS OUT 11 GND 10 GSM OUT 9 GND 16 GND 1 DCS IN 2 GND 3 GSM IN 4 GND 5 6 VCC 15 GND 14.
  • 55% GSM and 50% DCS Efficiency.
  • Internal Band Select Ordering Information RF3160 RF3160 PCBA Dual-Band GSM/DCS Power Amp Module Fully Assembled Evaluation Board 7 GND 8 VCC Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary RF3160 DUAL-BAND GSM/DCS POWER AMP MODULE 2 Typical Applications • 3V Dual-Band GSM/DCS Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible • GSM, E-GSM and DCS Products 2 POWER AMPLIFIERS Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50 Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.