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RF2311 - GENERAL PURPOSE AMPLIFIER

Description

The RF2311 is a general purpose, low cost low power RF amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 Ω gain block.

Features

  • DC to well over 1600MHz Operation.
  • Internally Matched Input and Output.
  • 14dB Small Signal Gain.
  • 4.2dB Noise Figure.
  • +9dBm Output Power.
  • Single 2.7V to 6V Positive Power Supply VCC 1 GND 2 GND 3 RF IN 4 8 RF OUT 7 GND 6 GND 5 GND Ordering Information RF2311 RF2311 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 123.

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Datasheet Details

Part number RF2311
Manufacturer RF Micro Devices
File Size 61.81 KB
Description GENERAL PURPOSE AMPLIFIER
Datasheet download datasheet RF2311 Datasheet

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Full PDF Text Transcription

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RF2311 4 Typical Applications • General Purpose High Bandwidth Gain Blocks • IF or RF Buffer Amplifiers • Broadband Test Equipment • Final PA for Medium Power Applications • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIER Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz. The gain flatness and high bandwidth make the device suitable for many other applications as well.
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