• Part: D10040200PL1
  • Description: 45-1000MHz GaAs/GaN PWR DBLR HYBRID
  • Manufacturer: RF Micro Devices
  • Size: 128.85 KB
Download D10040200PL1 Datasheet PDF
RF Micro Devices
D10040200PL1
Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs Ga As p HEMT and Ga N HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability. Features - - - - - +VB Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT - - INPUT OUTPUT - - - Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 20.0d B Min. Gain at 1GHz 380m A Max. at 24VDC 45MHz to 1000MHz CATV Amplifier Systems Applications - - - Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS Parameter Overall Power Gain Slope [1] Flatness of Frequency Response Input Return Loss Min. 18.5 20.0 1.0 20 19 18 16 20 19 18 17 Specification Typ. 19.0 20.5 1.5 Max. 19.5 21.5 2.5 0.8 Unit d B d B d...