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RCS564 - Power Transistors

Features

  • High voltage ratings: VCBO= 300 V.
  • Maximum safe-area-of-operation curves.
  • High dissipation rating: PT = 175 W.
  • Low saturation voltages The RCA-RCS564 is a multiple epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure_ Multipleepitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds_ Multipleemitter-site design assureS uniform current flow throughout the structure, which.

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Datasheet Details

Part number RCS564
Manufacturer RCA
File Size 583.39 KB
Description Power Transistors
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Full PDF Text Transcription

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oornLJO Solid State Division File No. 779 Power Transistors RCSS64 300-V, 30-A, 17S-W Silicon N-P-N Switching Transistor For Switching Applications in Industrial and Commercial Equipment JEDECTO-3 H-1570 Features: • High voltage ratings: VCBO= 300 V • Maximum safe-area-of-operation curves • High dissipation rating: PT = 175 W • Low saturation voltages The RCA-RCS564 is a multiple epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure_ Multipleepitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds_ Multipleemitter-site design assureS uniform current flow throughout the structure, which produces a high ISlb and a large safeoperation area. The device uses the popular JEDEC TO-3 package.
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