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RCA423 - Power Transistor

Features

  • Maximum safe-area-of-operation curves.
  • Low saturation voltage: VCE(sat) = 0.8 V (max.1.
  • High voltage rating: VCEo(susl = 325 V.
  • High dissipation rating: PT = 125 W RCA.
  • 423 is an epitaxial silicon n.
  • p.
  • n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JEDEC TO.
  • 3 package. Featuring high breakdown.
  • voltage ratings and low saturation.
  • voltage values. the 'RCA.
  • 423 is especially suitable for.

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Datasheet Details

Part number RCA423
Manufacturer RCA
File Size 440.94 KB
Description Power Transistor
Datasheet download datasheet RCA423 Datasheet
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Full PDF Text Transcription

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_______________________________ FileNo.512 OOm3LlD Solid State Division Power Transistors RCA423 High-Voltage, High-Power Silicon N-P-N Power Transistor For Switching and Linear Applications in Military, Industrial, and Commercial Equipment JEDEC TO·3 Features: • Maximum safe-area-of-operation curves • Low saturation voltage: VCE(sat) = 0.8 V (max.1 • High voltage rating: VCEo(susl = 325 V • High dissipation rating: PT = 125 W RCA·423 is an epitaxial silicon n·p·n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JEDEC TO·3 package. Featuring high breakdown·voltage ratings and low saturation· voltage values. the 'RCA·423 is especially suitable for use in inverters, deflection circuits, switching regulators, high· voltage bridge amplifiers.
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