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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 583
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Solid State Division
Power Transistors
RCA 29 RCA 298
RCA29A RCA29C
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors
For Power-Amplifier and High-Speed-Switching Applications
Features:
JEDEC TO·220 AB
• 30 W at 25°C case temperature • 3 A rated ciollector current • Min. fT of 3 MHz at 10 V, 200 mA • Designed for complementary use with RCA30, RCA30A, RCA30B,
and RCA30C p-n-p types*
RCA29, RCA29A, RCA29B, and RCA29C are epitaxial-base, silicon n·p·n transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity
amplifiers.
RCA29B Datasheet
