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QPM1021 - 100W GaN Power Amplifier

Datasheet Summary

Description

10

Data Sheet Rev.

 12 GHz 100 W GaN Power Amplifier Absolute Maximum Ratings Recommended Oper

Features

  • Frequency Range: 10.
  • 12 GHz.
  • PSAT: > 50 dBm (PIN = 28 dBm).
  • PAE: > 32% (PIN = 28 dBm).
  • Large Signal Gain: > 20 dB (PIN = 28 dBm).
  • Small Signal Gain: > 26 dB.
  • Bias: VD = 28 V, IDQ = 2.0 A.
  • Package Dimensions: 19.05 x 19.05 x 4.52 mm.
  • Performance Under Pulsed Operation Functional Block Diagram 1 2 RF IN 3 4 5 10 9 8 RF OUT 7 6 Performance is typical across frequency. Please reference electrical specification table.

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Datasheet Details

Part number QPM1021
Manufacturer Qorvo
File Size 649.14 KB
Description 100W GaN Power Amplifier
Datasheet download datasheet QPM1021 Datasheet
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QPM1021 ® 10 – 12 GHz 100 W GaN Power Amplifier Product Overview Qorvo’s QPM1021 is a packaged, high power amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process. The QPM1021 operates from 10 – 12 GHz and provides 100 W (50 dBm) of saturated output power with 20 dB of large signal gain and greater than 32 % power–added efficiency. The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The QPM1021 is ideally suited for both commercial and military radar systems, satellite communications systems, and data links. RoHS compliant.
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