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QPD1026L - GaN RF Input-Matched Transistor

Datasheet Summary

Description

420 450 MHz Transistor 432

Datasheet Rev.

450 MHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings 1, 2, 3 Recommended Operating C

Features

  • Frequency: 420 to 450 MHz.
  • Output Power (P3dB)1: 1318 W.
  • Linear Gain1: 25.9 dB.
  • Typical PAE3dB1: 80.8 %.
  • Operating Voltage: 65 V.
  • CW and Pulse capable Note 1: @ 440 MHz Load Pull.

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Datasheet Details

Part number QPD1026L
Manufacturer Qorvo
File Size 1.85 MB
Description GaN RF Input-Matched Transistor
Datasheet download datasheet QPD1026L Datasheet
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QPD1026L 1300 W, 65 V, 420 – 450 MHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public safety radio and radiolocation service. The device can support both CW and pulsed operations. RoHS compliant Evaluation boards are available upon request. 4-lead NI-1230 Package (Eared) Functional Block Diagram Key Features • Frequency: 420 to 450 MHz • Output Power (P3dB)1: 1318 W • Linear Gain1: 25.9 dB • Typical PAE3dB1: 80.
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