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QPA2040D - 2 Watt GaN Power Amplifier

General Description

20 

Data Sheet Rev.

 40 GHz 2 Watt GaN Power Amplifier Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 V

Key Features

  • Frequency Range: 20 .
  •  40 GHz.
  • PSAT (PIN=21 dBm): 33.5 dBm.
  • PAE (PIN=21 dBm): 13 %.
  • Power Gain (PIN=21 dBm): 12.5 dB.
  • Small Signal Gain: 24.3 dB.
  • Bias: VD = 18 V, IDQ = 462 mA.
  • Die Dimensions: 2.772 x 1.962 x 0.050 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram VD1 VD2 VD3.

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Datasheet Details

Part number QPA2040D
Manufacturer Qorvo
File Size 694.77 KB
Description 2 Watt GaN Power Amplifier
Datasheet download datasheet QPA2040D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QPA2040D ® 20 – 40 GHz 2 Watt GaN Power Amplifier Product Overview Qorvo's QPA2040D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 20 and 40 GHz, it achieves saturated output power of 2 W with power-added efficiency of 13%. To simplify system integration, the QPA2040D is fully matched to 50 ohms with integrated DC blocking caps on both RF I/O ports. The RF input is DC blocked, and the RF output is a DC short. The QPA2040D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Key Features • Frequency Range: 20 – 40 GHz • PSAT (PIN=21 dBm): 33.5 dBm • PAE (PIN=21 dBm): 13 % • Power Gain (PIN=21 dBm): 12.5 dB • Small Signal Gain: 24.