Datasheet4U Logo Datasheet4U.com

QPA0812 - 1 Watt X-Band Power Amplifier

Datasheet Summary

Description

1 Watt X-Band Power Amplifier 500 pcs.

Data Sheet Rev.

5 to 0 V Dr

Features

  • Frequency Range: 8.5.
  • 10.5 GHz.
  • Output Power (PIN = 6 dBm): 30.8 dBm.
  • PAE (PIN = 6 dBm): 48.2 %.
  • Small Signal Gain: 34.4 dB.
  • Recommended Bias: VD = 6 V, IDQ = 156 mA.
  • Package Size: 4.0 mm x 3.0 mm x 0.85 mm Functional Block Diagram RF IN.

📥 Download Datasheet

Datasheet preview – QPA0812

Datasheet Details

Part number QPA0812
Manufacturer Qorvo
File Size 961.57 KB
Description 1 Watt X-Band Power Amplifier
Datasheet download datasheet QPA0812 Datasheet
Additional preview pages of the QPA0812 datasheet.

📁 Similar Datasheet

  • QPA1013D - 10W GaN Power Amplifier (TriQuint)
  • QPA2237 - 10W GaN Power Amplifier (TriQuint Semiconductor)
  • QPA2626 - GaAs Low Noise Amplifier (TriQuint Semiconductor)
  • QPA2628 - GaAs Low Noise Amplifier (TriQuint Semiconductor)
  • QPA2628D - GaAs Low Noise Amplifier (TriQuint Semiconductor)
  • QPA3230 - GaAs/GaN Power Doubler Hybrid (RF Micro Devices)
  • QPA3240 - GaAs/GaN Power Doubler Hybrid (RF Micro Devices)
  • QPA4263A - DC to 3500MHz CASCADABLE SiGe HBT MMIC AMPLIFIER (RF Micro Devices)
  • QPA4363A - CASCADABLE SiGe HBT MMIC AMPLIFIER (RF Micro Devices)
  • QPA4463A - CASCADABLE SiGe HBT MMIC AMPLIFIER (RF Micro Devices)
Other Datasheets by Qorvo
  • QPA0001 - 2W GaN Driver Amplifier
  • QPA0015 - 8 Watt GaN Power Amplifier
  • QPA0016 - 15 Watt GaN Power Amplifier
  • QPA0023 - Driver Amplifier
  • QPA0106 - 18W GaN Power Amplifier
  • QPA0163L - CASCADABLE SiGe HBT MMIC AMPLIFIER
  • QPA0363A - CASCADABLE SiGe HBT MMIC AMPLIFIER
  • QPA0506 - 4Watt C-Band Power Amplifier

Full PDF Text Transcription

Click to expand full text
QPA0812 ® 1 Watt X-Band Power Amplifier Product Overview Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides > 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency. Packaged in a small 4 x 3 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar applications is easily supported. RF input and output ports are matched to 50Ω and include integrated DC blocking capacitors. Lead-free and RoHS compliant. 4 mm x 3 mm plastic overmold QFN Key Features • Frequency Range: 8.5 – 10.5 GHz • Output Power (PIN = 6 dBm): 30.8 dBm • PAE (PIN = 6 dBm): 48.2 % • Small Signal Gain: 34.
Published: |