The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si Photodiode
For Visible to Near IR range
QY-S1010NP
Features
High sensitivity
High cost performance
Applications
Optical equipments Analytical instruments Measurements equipments
Maximum ratings (Typ. Ta=25℃)
Item
Symbol
Rating
Reverse voltage
VR 5
Chip Size
S 10*10
Operating temperature.
Topr.
-20~+80
Storage temperature.
Tstg.
-30~+120
Soldering temp. *
Tsol.
260
For MAX 5 seconds at the position of 2mm from the package
Unit V
mm2
℃ ℃ ℃
Electro-optical characteristics (Typ. Ta=25℃)
Item Open circuit voltage Short circuit current Dark current Terminal Capacitance Spectral sensitivity Peak wavelength
Symbol VOC ISC Id Ct λ λp
Conditions EV=100Lx
2856K
VR= -1V V=0V,f=10KHz
Min. 400
Typ. 0.3 55 120 20
940
Max. 1100
Unit V μA nA nF nm nm
http://www.
QY-S1010NP Datasheet
