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QLF063D-AA - 660 nm 50mW FP LASER TO-CAN

Download the QLF063D-AA datasheet PDF. This datasheet also covers the QLF063A-AA variant, as both devices belong to the same 660 nm 50mw fp laser to-can family and are provided as variant models within a single manufacturer datasheet.

Description

The QLF063A-AA/QLF063D-AA are 660 nm quantum well laser devices designed for high output power application.

The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.

2.

Features

  • 660 nm FP-LD.
  • 5.6mm TO-CAN package.
  • High output power and high slope efficiency.
  • Including monitor PD.
  • Two types of pin assignments: anode common type (QLF063A-AA)/cathode common type (QLF063D-AA) 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (QLF063A-AA-QDLaser.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QLF063D-AA
Manufacturer QD Laser
File Size 184.85 KB
Description 660 nm 50mW FP LASER TO-CAN
Datasheet download datasheet QLF063D-AA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by QD Laser

Part Number Description
QLF063D-P120 660 nm 120mW FP LASER TO-CAN
QLF063D 660 nm 100mW FP LASER TO-CAN
QLF063A 660 nm 100mW FP LASER TO-CAN
QLF063A-4030T50 640 nm 30mW FP LASER TO-CAN
QLF063A-AA 660 nm 50mW FP LASER TO-CAN

Full PDF Text Transcription

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QLF063A-AA /QLF063D-AA 660 nm 50mW FP LASER TO-CAN C00111-01 June 2013 1. DESCRIPTION The QLF063A-AA/QLF063D-AA are 660 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap. 2. FEATURES  660 nm FP-LD  5.6mm TO-CAN package  High output power and high slope efficiency  Including monitor PD  Two types of pin assignments: anode common type (QLF063A-AA)/cathode common type (QLF063D-AA) 3.    APPLICATIONS Industrial laser markers Measuring instruments Life science applications 4.
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