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V58C2512164SB - High Performance 512M-Bit DDR SDRAM

Download the V58C2512164SB datasheet PDF. This datasheet also covers the V58C2512164SBI5 variant, as both devices belong to the same high performance 512m-bit ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164).

Key Features

  • High speed data transfer rates with system frequency up to 200MHz.
  • Data Mask for Write Control.
  • Four Banks controlled by BA0 & BA1.
  • Programmable CAS Latency: 2.5, 3.
  • Programmable Wrap Sequence: Sequential or Interleave.
  • Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 8192 cycles/64 ms.
  • Available i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V58C2512164SBI5_ProMOSTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V58C2512164SB
Manufacturer ProMOS Technologies
File Size 0.99 MB
Description High Performance 512M-Bit DDR SDRAM
Datasheet download datasheet V58C2512164SB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com V58C2512(804/404/164)SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 DDR400 Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 6ns 5ns 200 MHz 6 DDR333 6ns 166 MHz 75 DDR266 7.5ns 133 MHz Features ■ High speed data transfer rates with system frequency up to 200MHz ■ Data Mask for Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2.