The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor
PT236T30E2 Transistor
16 25 34
Mechanical Characteristics
Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:≤3mil
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation @25°C Storage Temperature Max.
PT236T30E2 Datasheet
