PSM8PN06R15
Description
The PSM8PN06R15 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for use as a load switch or in PWM applications.
MOSFET Product Summary
VDS(V) 60
RDS(on)(mΩ) 12@ VGS = 10V 16@ VGS = 4.5V
ID(A) 37
Feature
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Excellent Qgd x RDS(ON) Product(FOM)
- Advanced Technology for DC-DC Converts
- Small Form Factor Thermally Efficient Package
Enables Higher Density End Products
- 100% UIS (Avalanche) Rated
- Lead-Free Finish ; Ro HS pliant
- Halogen and Antimony Free. ”Green” Device
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance Junction-to-Ambient5)
Thermal Resistance Junction-to-Cas...
