The PSM6N30V20 uses split gate trench technology to provide excellent Rdson low gate charge.
This device is suitable for power management and high efficiency applications at high switching frequencies applications.
| Part number | PSM6N30V20 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 391.34 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PSM6N30V20 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PSM-001KPDW | Pressure sensor module | Fujikura |
| PSM-001KPGW | Pressure sensor module | Fujikura |
| PSM-002KPD | Pressure sensor module | Fujikura |
| PSM-002KPDW | Pressure sensor module | Fujikura |
| PSM-002KPG | Pressure sensor module | Fujikura |
| Part Number | Description |
|---|---|
| PSM6N03R7 | N-Channel MOSFET |
| PSM8N03R2 | N-Channel MOSFET |
| PSM8N03R4 | N-Channel MOSFET |
| PSM8N10R8 | N-Channel MOSFET |
| PSM8N10R8HD | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
