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Feature
Forward Current: 1A Reverse voltage: 20V Low forward voltage Low leakage current Trench MOS barrier Schottky technology Ultra Small mold type. (DFN1006-2L)
PSBD2FD20V1H Low VF Schoktty Barrier Diode
DFN1006-2L (Bottom View)
Applications
Low current rectification Voltage clamping Protection circuits Ultra high-speed switching
Mechanical Characteristics
Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements DFN1006-2L without plating
Electrical characteristics per line@25℃
Parameter
Forward voltage Forward voltage Forward voltage Forward voltage Reverse current
Junction Capacitance
Symbol
VF VF VF VF IR
CJ
Min.
-
-
Typ.
0.31 0.38 0.45 0.51
-
90
Pin 1
Pin 2
Circuit Diagram
VS
Marking (Top View)
Max.
0.36 0.
PSBD2FD20V1H Datasheet
