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Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor
Mechanical Characteristics
Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements Pin flatness:≤3mil
PPT8N30E2 Transistor
8(C) 7(C) 6(C) 5(E)
1(C) 2(C) 3(C) 4(B)
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current(1) Base Current Base Peak Current Total Dissipation @25°C(2) Storage Temperature Max.
PPT8N30E2 Datasheet
