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PPMT2305 - P-Channel MOSFET

General Description

The PPMT2305 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and current

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Datasheet Details

Part number PPMT2305
Manufacturer Prisemi
File Size 557.63 KB
Description P-Channel MOSFET
Datasheet download datasheet PPMT2305 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The PPMT2305 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ)(Typ) 22@ VGS = -4.5V 28@ VGS = -2.5V ID(A) -6 Feature  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Applications  PWM applications  Load switch  Power management  DC-DC Converters  Wireless Chargers Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous1) Pulsed Drain Current2) TC=25℃ TC=100℃ Total Power Dissipation3) Thermal Resistance , Junction-to-Ambient4) Junction and Storage Temperature Range Rev.06.