PPMT2305
Description
The PPMT2305 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS(V) -20
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 22@ VGS = -4.5V 28@ VGS = -2.5V
ID(A) -6
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Thermal Resistance , Junction-to-Ambient4)
Junction and Storage Temperature Range
Rev.06.0
Symbol VDS VGS
IDM PD RθJA TJ,TSTG
PPMT2305 P-Channel MOSFET
SOT-23 (Bottom View)
D(3) G(1)
S(2)
Circuit Diagram
D(3)
G(1)
S(2)
Marking (Top...
