PPM3GN20V3
Description
The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) -20
RDS(on)(mΩ)(Typ) 53 @ VGS = -4.5V 67 @ VGS = -2.5V
ID(A) -4.0
PPM3GN20V3 P-Channel MOSFET
D(3)
S(2) G(1)
DFN1212-3L (Bottom View)
D(3)
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance , Junction-to-Case5)
Thermal Resistance , Junction-to-Ambient5)
Junction and Storage Temperature Range
Rev.06.0
Symbol VDS VGS
IDM PD IAS EAS RθJC RθJA TJ,TSTG
G(1)
S(2)
Circuit Diagram...
