PNMT45V2
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) 45
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
100@ VGS=10V 2
110@ VGS=4.5V
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Source diode) current(Body Continuous Pulsed
Total Power Dissipation
Channel temperature
Range of storage temperature
Symbol
VDS VGS ID ID IS ISP PD Tch Tstg
G（1） S（2）
Value
45 ±12 2.0
8 0.8 8 1.0 150 -55 to +150
Units
V V A A A A W °C °C
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)-
Limits
Units
℃/W
Body diode characteristics(Source-drain)(Ta=25℃)
Parameter
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