PI50F65T3H1A7
Description
PI50F65T3H1A7 Insulate-Gate Bipolar Transistor
CE G
TO-247-3L
Features
- Trench and field-stop technology
- Easy parallel switching capability
- High efficiency for inverters
- High ruggedness performance
- Ro HS pliant
PI50F65T3H1A7 YYWW
Circuit Diagram
Applications
- Industrial UPS
- Welding machine
- Solar converters
- Energy storage
- EV charger
- PFC applications
- Welding machines
Marking (Top View)
Absolute maximum rating@25℃
Parameter Collector-Emitter Voltage Gate-Emitter Voltage
Collector Current
Pulsed Collector Current Diode Forward Current Diode Maximum Forward Current
Power Dissipation
Operating Junction Temperature Storage Temperature
Tc= 25℃ Tc= 100℃
Tc= 100℃
Tc= 25℃ Tc= 100℃
Symbol VCE VGE
ICM IF IFM
TVJ TSTG
Value 650 ±20 100 50 200 50 200 312 156 -40~+175 -55~+150
Units V V
℃...
