• Part: PGCTL65R70B
  • Description: 650V GaN Power Transistor
  • Category: Transistor
  • Manufacturer: Prisemi
  • Size: 1.81 MB
Download PGCTL65R70B Datasheet PDF
Prisemi
PGCTL65R70B
Description PGCTL65R70B 650V Ga N Power Transistor VDS(V) 650 Product Summary RDS(on)(mΩ)(Typ) 70@ VGS = 12V ID(A) 27 Feature - Easy to use, patible with standard gate drivers - Excellent QG x RDS(on) figure of merit (FOM) - Low QRR, no free-wheeling diode required - Low switching loss - Ro HS pliant and Halogen-free Applications - High efficiency power supplies - Tele and data - Automotive - Servo motors Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Transient Drain-Source Voltage1) Continuous Drain Current Pulsed Drain Current (Pulse Width: 100μs) Power Dissipation TC=25℃ TC=100℃ TC=25℃ TC=100℃ Soldering Peak Temperature Operating Junction and Storage Temperature Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient2) Rev.06.0 D S 1 G KS TOLL (Bottom View) Schematic Symbol Cascode Device Structure Symbol VDS VGS VTDS PD TCSOLD TJ,TSTG Rating Unit ±20...