PGCTL65R70B - 650V GaN Power Transistor

Description

PGCTL65R70B 650V GaN Power Transistor VDS(V) 650 Product Summary RDS(on)(mΩ)(Typ) 70@ VGS = 12V ID(A) 27 Feature Easy to use, compatible with standard gate drivers Excellent QG x RDS(on) figure of merit (FOM) Low QRR, no free-wheeling diode required Low switching loss

Prisemi

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Part number	PGCTL65R70B
Manufacturer	Prisemi
File Size	1.81 MB
Description	650V GaN Power Transistor
Datasheet	PGCTL65R70B Datasheet
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Description PGCTL65R70B 650V GaN Power Transistor VDS(V) 650 Product Summary RDS(on)(mΩ)(Typ) 70@ VGS = 12V ID(A) 27 Feature  Easy to use, compatible with standard gate drivers  Excellent QG x RDS(on) figure of merit (FOM)  Low QRR, no free-wheeling diode required  Low switching loss  RoHS compliant and Halogen-free Applications  High efficiency power supplies  Telecom and datacom  Automotive  Servo motors Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Transient Drain-Source Voltage1) Continuous Drain Current Pulsed Drain Current (Pulse Width: 100μs) Power Dissipation TC=25℃ TC=100℃ TC=25℃ TC=100℃ Soldering Peak Temperature Operating Junction and Storage Temperature Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Therm

Published: Jul 17, 2025 |