PGCDP70R180B
Description
PGCDP70R180B 700V Ga N Power Transistor
VDS(V) 700
Product Summary RDS(on)(mΩ)(Typ) 180
ID(A) 12.8
Feature
- Easy to use, patible with standard gate drivers
- Excellent QG x RDS(on) figure of merit (FOM)
- Low QRR, no free-wheeling diode required
- Low switching loss
- Ro HS pliant and Halogen-free
Applications
- High efficiency power supplies
- Tele and data
- Automotive
- Servo motors
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Transient Drain-Source Voltage1)
Continuous Drain Current Pulsed Drain Current (Pulse Width: 100μs) Power Dissipation
TC=25℃ TC=100℃ TC=25℃ TC=150℃
Soldering Peak Temperature
Operating Junction and Storage Temperature
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient2)
Rev.06.1
TO-252 (Top View)
Schematic Symbol
Cascode
Device Structure
Symbol VDS VGS VTDS
PD TCSOLD TJ，TSTG
Rating
Unit...
