PESDLC2FD3V3BH
Description
The PESDLC2FD3V3BH protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
DFN1006-2L(Bottom View)
Feature
- 120W peak pulse power per line (t P = 8/20μs)
- DFN1006-2L package
- Response time is typically < 1 ns
- Bidirectional configurations
- Low clamping voltage
- Ro HS pliant
- Transient protection for data lines to
IEC 61000-4-2(ESD) ±30k V(air), ± 30k V(contact); IEC 61000-4-5 (Lightning) 8A (8/20us)
Pin1
Pin2
Circuit Diagram
3BH
Marking (Top View)
Applications
- Cell phone handsets and accessories
- Personal digital assistants (PDA’s)
- Notebooks,...
