PDM6UT20V08E
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
MOSFET Product Summary
VDS(V)
RDS(on)(Ω)
N-Channel 20
0.3@ VGS=4.0V 0.45@ VGS=2.5V 0.6@ VGS=1.8V
P-Channel -20
0.9@ VGS=-4.5V 1.2@ VGS=-2.5V 1.5@ VGS=-1.8V
ID(A) 0.6
-0.8
N-Channel
D1 G2 S2
S1 G1 D2
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
TA=25℃ Total Power Dissipation
TA=125℃
Symbol
VDS VGS ID ID PD PD
Value
20 ±8 0.6 3.0 170 155
Units
V V A A m W m W
Rev.06.2
.prisemi.
N-Channel and P-Channel,20V,Small signal MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter...
