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PSTG25HTT12 - Powerline N-Channel Trench Gate-IGBT

Features

  • Package with DCB ceramic base plate and soldering pins for PCB mounting.
  • Isolation voltage over 3000 V∼.
  • Trench Gate.
  • Enhancement Mode N-Channel Device.
  • Non Punch through Structure.
  • High Switching Speed.
  • Low On-state Saturation Voltage.
  • High Input Impedance Simplifies Gate Drive.
  • Latch-Free Operation.
  • Fully Short Circuit Rated to 10 µs.
  • Wide RBSOA.

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Datasheet Details

Part number PSTG25HTT12
Manufacturer Powersem GmbH
File Size 238.58 KB
Description Powerline N-Channel Trench Gate-IGBT
Datasheet download datasheet PSTG25HTT12 Datasheet

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Other Datasheets by Powersem GmbH

Part Number Description
PSTG25HDT12 Powerline N-Channel Trench Gate-IGBT
PSTG50HST12 Powerline N-Channel Trench Gate-IGBT
PSTG75HST12 Powerline N-Channel Trench Gate-IGBT

Full PDF Text Transcription

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ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Triple Module PSTG 25HTT12 VCES VCE(sat) IC25 IC75 ICM tSC = 1200 V = 1.9 V = 35 A = 25 A = 75 A = 10 µs Preliminary Data Sheet Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 35 25 75 45 10 -40...+150 -40...
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