CT35SM-8
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
STROBE FLASHER USE
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5 r
φ 3.2
1.0 q 5.45 w e 5.45
19.5MIN.
4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e q
¡VCES 400V ¡ICM 200A
TO-3P
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
Ratings 400 ±30 ±40 200
- 40 ~ +150
- 40 ~ +150
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1m A, VGE = 0V VCE = 400V, VGE = 0V VGE =...
