CT30VM-8
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
STROBE FLASHER USE
OUTLINE DRAWING
1.5MAX. r 10.5MAX.
Dimensions in mm
1 13.2 ± 0.5
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
0.5 2.5 2.5
0.5 wr q
¡VCES 400V ¡ICM 180A q GATE w COLLECTOR e EMITTER r COLLECTOR e
TO-220C
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
2.6 ± 0.4 q w e
Ratings 400 ±30 ±40 180
- 40 ~ +150
- 40 ~ +150
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1m A, VGE = 0V VCE = 400V,...
