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HXN0680 - Silicon N-Channel Power MOSFET

Download the HXN0680 datasheet PDF. This datasheet also covers the HXN0680-Power variant, as both devices belong to the same silicon n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The HXN0680 is n-channel power trench MOSFET with latest technology.

So fast switching speed and low onresistance.

Usually used at power switching application .

Features

  • Latest Trench Power MOSFET technology.
  • Low On-state Resistance.
  • High Current Density.
  • Low Gate Charge.
  • 100% UIS Test Product Summery BVDS 60V RDSON 6.5mΩ ID 80A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HXN0680-Power-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HXN0680
Manufacturer Power-IC
File Size 294.88 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HXN0680 Datasheet

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Full PDF Text Transcription

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Description The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresistance. Usually used at power switching application . It is also intended for any applications with low gate drive requirements . Features ·Latest Trench Power MOSFET technology ·Low On-state Resistance ·High Current Density ·Low Gate Charge ·100% UIS Test Product Summery BVDS 60V RDSON 6.
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