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PMY09N90T - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 9A TO-3P Pin Configuration GDS.

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Datasheet Details

Part number PMY09N90T
Manufacturer Potens semiconductor
File Size 687.17 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMY09N90T Datasheet

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900V N-Channel MOSFETs PMY09N90T General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 900V RDSON 1.
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