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PMP09N20M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 200V,9A, RDS(ON) =0.28Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PMP09N20M
Manufacturer Potens semiconductor
File Size 712.13 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMP09N20M Datasheet

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Full PDF Text Transcription

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200V N-Channel MOSFETs PMP09N20M General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S BVDSS 200V RDSON 0.28 ID 9A Features  200V,9A, RDS(ON) =0.
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