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PMD04N65M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 4A TO252 Pin Configuration D S G.

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Datasheet Details

Part number PMD04N65M
Manufacturer Potens semiconductor
File Size 395.83 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMD04N65M Datasheet

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650V N-Channel MOSFETs PMD04N65M General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 650V RDSON 2.
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