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PMC4998X - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,200A, RDS(ON) =1.4mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PMC4998X
Manufacturer Potens semiconductor
File Size 867.90 KB
Description N-Channel MOSFET
Datasheet download datasheet PMC4998X Datasheet

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Full PDF Text Transcription

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40V N-Channel MOSFETs PMC4998X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 40V RDSON 1.4m ID 200A Features  40V,200A, RDS(ON) =1.
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