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PJF20N65 - 650V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • 20A,650V, RDS(ON) =0.19Ω@VGS = 10V Low gate charge (typical 52nC) Low Crss (typical 8.5 pF) Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available.

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Datasheet Details

Part number PJF20N65
Manufacturer Potens semiconductor
File Size 202.29 KB
Description 650V N-Channel MOSFETs
Datasheet download datasheet PJF20N65 Datasheet

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Full PDF Text Transcription

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration GDS PJF20N65 Features 20A,650V, RDS(ON) =0.19Ω@VGS = 10V Low gate charge (typical 52nC) Low Crss (typical 8.
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