PDS4910 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

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PDS4910 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS4910
Manufacturer	Potens semiconductor
File Size	768.68 KB
Description	N-Channel MOSFETs
Datasheet	PDS4910 Datasheet

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Full PDF Text Transcription for PDS4910 (Reference)

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40V N-Channel MOSFETs PDS4910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G S SS G D S BVDSS 40V RDSON 19m ID 6.7A Features  40V, 6.