Datasheet Details
| Part number | PDQ3714 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 677.23 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
 PDQ3714 Datasheet
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| Part number | PDQ3714 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 677.23 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
PDQ3714 Datasheet
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These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
30V N+P Dual Channel MOSFETs General.
| Part Number | Description |
|---|---|
| PDQ3907 | P-Channel MOSFETs |
| PDQ3909 | P-Channel MOSFETs |
| PDQ3911 | P-Channel MOSFETs |
| PDQ3912 | N-Channel MOSFETs |
| PDQ02N15 | N-Channel MOSFETs |
| PDQ0854-R | Dual N-Channel MOSFETs |
| PDQ2116 | N+P Channel MOSFETs |
| PDQ2215 | Dual P-Channel MOSFETs |
| PDQ2218 | Dual N-Channel MOSFETs |
| PDQ2307 | P-Channel MOSFETs |