PDN2316S - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

20V, 5A, RDS(ON) =40mΩ@VGS = 4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for 1.8V Gate Drive.

📥 Download Datasheet

PDN2316S n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDN2316S
Manufacturer	Potens semiconductor
File Size	505.61 KB
Description	N-Channel MOSFETs
Datasheet	PDN2316S Datasheet

Other Datasheets by Potens semiconductor

Part Number	Description
PDN2311S	P-Channel MOSFET
PDN2312S	N-Channel MOSFETs
PDN2313S	P-Channel MOSFET
PDN2314S	N-Channel MOSFETs
PDN2315S	P-Channel MOSFET
PDN2317S	P-Channel MOSFET
PDN2318S	N-Channel MOSFETs
PDN2307	P-Channel MOSFETs
PDN2309	P-Channel MOSFETs
PDN2309S	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

20V N-Channel MOSFETs PDN2316S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 40m ID 5A Features  20V, 5A, RDS(ON) =40mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.