Datasheet Details
| Part number | PDD02N60 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 552.39 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDD02N60 Datasheet
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| Part number | PDD02N60 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 552.39 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDD02N60 Datasheet
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These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D S G PDD02N60 BVDSS 600V RDSON 8Ω ID 2A
600V N-Channel MOSFETs General.
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