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polyfet rf devices
SD723
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR 60.0 Watts Push - Pull
Package Style AD HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE ROHS COMPLIANT
Total Device Dissipation
270 Watts
Junction to Case Thermal
Resistance
o 0.
SD723 Datasheet
