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L2801 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number L2801
Manufacturer Polyfet RF Devices
File Size 42.16 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet download datasheet L2801 Datasheet

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Full PDF Text Transcription (Reference)

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polyfet rf devices L2801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
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